sep. 2001 preliminary notice: this is not a final specification. some parametric limits are subject to change. pin configuration mitsubishi semiconductor m63836fp/kp 8-unit 500ma darlington transistor-array with clamp diode description the m63836fp/kp 8-channel sinkdriver, consists of 8 pnp and 16 npn transistors connected to from eight high current gain driver pairs. features high breakdown voltage (bv ceo 50v) high-current driving (i c(max) = 500ma) 3v micro computer compatible input l active level input with input diode with clamping diodes wide operating temperature range (ta = ?0 to +85 c) application output for 3 voltage microcomputer series and interface with high voltage system. relay and small printer driver, led, or incandescent display digit driver. function the m63836fp/kp is transistor-array of high active level eight units type which can do direct drive of 3 voltage micro- computer series. a resistor of 3.5k ? is connected between the input and the base of pnp transistors. a clamp diode for inductive load transient suppression is connected for the output pin (collector) and com pin. the input diode is in- tended to prevent the flow of current from the input to the vcc. without this diode, the current flows from h input to the vcc and the l input circuit is activated, in such a case where one of the inputs of the 8 circuit is h and the other are l to save power consumption. the diode is inserted to prevent such mis-operation. the outputs are capable of driv- ing 500ma and are rated for operation with output voltage up to 50v. circuit diagram input 3.5k 7.2k 3k 1.05k 20k v cc com gnd output unit : ? the eight circuits share the vcc, com and gnd the diode, indicated with the dotted line, is parasitic, and cannot be used. supply voltage collector-emitter voltage collector current input voltage clamping diode forward current clamping diode reverse voltage power dissipation operating temperature storage temperature v v ma v ma v w c c 7 0.5 ~ +50 500 0.5 ~ v cc 500 50 1.10(fp)/0.68(kp) 40 ~ +85 55 ~ +125 ratings symbol parameter conditions unit absolute maximum ratings (unless otherwise noted, ta = ?0 ~ +85 c) output, h current per circuit output, l ta = 2 5 c, when mounted on board v cc v ceo i c v i i f v r p d t opr t stg 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 nc in1 gnd com common v cc input output o1 o2 o3 o4 o5 o6 o7 o8 in2 in3 in4 in5 in6 in7 in8 nc : no connection package type 20p2n-a(fp) 20p2e-a(kp)
sep. 2001 preliminary notice: this is not a final specification. some parametric limits are subject to change. mitsubishi semiconductor m63836fp/kp 8-unit 500ma darlington transistor-array with clamp diode recommended operating conditions (unless otherwise noted, ta = 40 ~ +85 c) v parameter 2.7 limits min typ max symbol unit v cc supply voltage h input voltage l input voltage collector current (current per 1 circuit when 8 circuits are coming on simultaneously) i c 0 0 v cc -0.5 0 3.0 3.6 400 200 v cc v cc -2.2 ma v v v ih v il duty cycle fp : no more than 4% kp : no more than 2% duty cycle fp : no more than 15% kp : no more than 6% electrical characteristics (unless otherwise noted, ta = 40 ~ +85 c) ? : typical values are at ta = 25 c 1.15 0.93 220 1.4 0.1 2.6 10000 50 2000 v (br) ceo i i v f i r i cc h fe v v a v a ma 2.4 1.6 600 2.4 100 4.0 symbol unit parameter test conditions limits min typ max collector-emitter breakdown voltage input current clamping diode forward volltage clamping diode reverse current supply current (an only input) dc amplification factor i ceo = 100 a v cc = 2.7v, v i = 0.5v, i c = 400ma v cc = 2.7v, v i = 0.5v, i c = 200ma v i = v cc -2.2v i f = 400ma v r = 50v v cc = 3.6v, v i = 0.5v v cc = 2.7v, v ce = 2v, i c = 0.35a, ta = 25 c v ce(sat) collector-emitter saturation voltage ? ns ns 120 4500 symbol unit parameter test conditions limits min typ max turn-on time turn-off time t on t off c l = 15pf (note 1) switching characteristics (unless otherwise noted, ta = 25 c) timing diagram note 1 test circuit input 50% 50% 50% 50% output ton toff pg input v cc output v o r l open c l 50 ? (1)pulse generator (pg) characteristics : prr=1khz, tw = 10 s, tr = 6ns, tf = 6ns, zo = 50 ? v i = 0.5 ~ 2.7v (2)input-output conditions : r l = 30 ? , vo = 10v, vcc = 2.7v (3)electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes measured device
sep. 2001 preliminary notice: this is not a final specification. some parametric limits are subject to change. mitsubishi semiconductor m63836fp/kp 8-unit 500ma darlington transistor-array with clamp diode typical characteristics thermal derating factor characteristics 2.0 1.5 1.0 0.5 0 0 25 50 75 100 M63836KP m63836fp 85 0.572 0.354 1.10 0.68 power dissipation pd(max) (w) ambient temperature ta ( c) output saturation voltage collector current characteristics 400 300 200 100 0 0 0.5 1.0 1.5 2.0 500 collector current ic (ma) output saturation voltage v ce(sat) (v) vcc=2.7v v i =0.5v ta= 85 c ta= 25 c ta= 20 c 500 400 300 200 100 0 0 100 20 40 60 80 duty cycle (%) collector current ic (ma) 500 400 300 200 100 0 100 20 40 60 80 0 duty cycle (%) collector current ic (ma) 500 400 300 200 100 0 100 20 40 60 80 0 duty cycle (%) collector current ic (ma) duty cycle-collector characteristics (m63836fp) duty cycle-collector characteristics (m63836gfp) duty cycle-collector characteristics (M63836KP) 500 400 300 200 100 0 100 20 40 60 80 0 duty cycle (%) duty cycle-collector characteristics (M63836KP) collector current ic (ma) the collector cu rrent values represent the current per circuit. repeated frequency 10hz the value the circle represents the value of the simultaneously-operated circuit. vcc = 3v ta = 25 c 1 2 7 3 4 5 8 6 1 2 7 5 3 4 8 6 1 2 7 5 3 4 8 6 1 2 7 5 3 4 8 6 the collector current values represent the current per circuit. repeated frequency 10hz the value the circle represents the value of the simultaneously- operated circuit. vcc = 3v ta = 85 c the collector current values represent the current per circuit. repeated frequency 10hz the value the circle represents the value of the simultaneously-operated circuit. vcc = 3v ta = 85 c the collector current values represent the current per circuit. repeated frequency 10hz the value the circle represents the value of the simultaneously-operated circuit. vcc = 3v ta = 25 c
sep. 2001 preliminary notice: this is not a final specification. some parametric limits are subject to change. mitsubishi semiconductor m63836fp/kp 8-unit 500ma darlington transistor-array with clamp diode dc amplification factor collector current characteristics collector current i c (ma) dc amplification factor h fe 10 2 10 3 3 2 5 7 10 4 3 2 5 7 10 5 3 2 5 7 10 2 3 257 10 3 3 257 10 1 v ce =2v ta=85 c ta=25 c ta = 40 c collector current i c (ma) 0 0.4 0.8 1.2 2.0 1.6 input voltage vcc-v i (v) output current characteristics 0 200 100 300 400 500 v ce =2v ta=85 c ta=25 c ta = 40 c input characteristics input current i i (ma) 1 023 input voltage vcc-v i (v) 0 0.3 0.2 0.1 0.4 0.5 0.6 v cc =3v ta=85 c ta=25 c ta = 40 c driver supply characteristics supply current icc (ma) 0246810 supply voltage vcc (v) 0 8.0 4.0 12.0 16.0 20.0 ta=25 c ta=85 c ta = 40 c v i =0.5v clamping diode characteristics forward bias current i f (ma) 0 0.5 1.0 1.5 2.0 forward bias voltage v f (v) 0 ta = 40 c ta=25 c ta=85 c 300 200 100 400 500
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